publication order number: ntf6p02t3/d ? semiconductor components industries, llc, 2013 august, 2013 ? rev. 6 1 ntf6p02, NVF6P02 power mosfet -10 amps, -20 volts p ? channel sot ? 223 features ? low r ds(on) ? logic level gate drive ? diode exhibits high speed, soft recovery ? avalanche energy specified ? nvf prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable* ? these devices are pb ? free and are rohs compliant typical applications ? power management in portables and battery ? powered products, i.e.: cellular and cordless telephones and pcmcia cards maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain ? to ? source voltage v dss ? 20 vdc gate ? to ? source voltage v gs 8.0 vdc drain current (note 1) ? continuous @ t a = 25 c ? continuous @ t a = 70 c ? single pulse (t p = 10 s) i d i d i dm ? 10 ? 8.4 ? 35 adc apk total power dissipation @ t a = 25 c p d 8.3 w operating and storage temperature range t j , t stg ? 55 to +150 c single pulse drain ? to ? source avalanche energy ? starting t j = 25 c (v dd = ? 20 vdc, v gs = ? 5.0 vdc, i l(pk) = ? 10 a, l = 3.0 mh, r g = 25 ) e as 150 mj thermal resistance ? junction to lead (note 1) ? junction to ambient (note 2) ? junction to ambient (note 3) r jl r ja r ja 15 71.4 160 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. steady state. 2. when surface mounted to an fr4 board using 1? pad size, (cu. area 1.127 sq in), steady state. 3. when surface mounted to an fr4 board using minimum recommended pad size, (cu. area 0.412 sq in), steady state. 1 2 3 4 ? 10 amperes ? 20 volts r ds(on) = 44 m (typ.) device package shipping ? ordering information sot ? 223 case 318e style 3 marking diagram & pin assignment http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. a = assembly location y = year w = work week 6p02 = specific device code = pb ? free package ayw 6p02 1 gate 2 drain 3 source drain 4 (note: microdot may be in either location) sot ? 223 (pb ? free) ntf6p02t3g 4000 / tape & reel g s d p ? channel mosfet sot ? 223 (pb ? free) NVF6P02t3g* 4000 / tape & reel free datasheet http:///
ntf6p02, NVF6P02 http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain ? to ? source breakdown voltage (note 4) (v gs = 0 vdc, i d = ? 250 adc) temperature coefficient (positive) v (br)dss ? 20 ? ? 25 ? 11 ? ? vdc mv/ c zero gate voltage drain current (v ds = ? 20 vdc, v gs = 0 vdc) (v ds = ? 20 vdc, v gs = 0 vdc, t j = 125 c) i dss ? ? ? ? ? 1.0 ? 10 adc gate ? body leakage current (v gs = 8.0 vdc, v ds = 0 vdc) i gss ? ? 100 nadc on characteristics (note 4) gate threshold voltage (note 4) (v ds = v gs , i d = ? 250 adc) threshold temperature coefficient (negative) v gs(th) ? 0.4 ? ? 0.7 2.6 ? 1.0 ? vdc mv/ c static drain ? to ? source on ? resistance (note 4) (v gs = ? 4.5 vdc, i d = ? 6.0 adc) (v gs = ? 2.5 vdc, i d = ? 4.0 adc) (v gs = ? 2.5 vdc, i d = ? 3.0 adc) r ds(on) ? ? ? 44 57 57 50 70 ? m forward transconductance (note 4) (v ds = ? 10 vdc, i d = ? 6.0 adc) g fs ? 12 ? mhos dynamic characteristics input capacitance (v ds = ? 16 vdc, v gs = 0 v, f = 1.0 mhz) c iss ? 900 1200 pf output capacitance c oss ? 350 500 transfer capacitance c rss ? 90 150 input capacitance (v ds = ? 10 vdc, v gs = 0 v, f = 1.0 mhz) c iss ? 940 ? pf output capacitance c oss ? 410 ? transfer capacitance c rss ? 110 ? switching characteristics (note 5) turn ? on delay time (v dd = ? 5.0 vdc, i d = ? 1.0 adc, v gs = ? 4.5 vdc, r g = 6.0 ) t d(on) ? 7.0 12 ns rise time t r ? 25 45 turn ? off delay time t d(off) ? 75 125 fall time t f ? 50 85 turn ? on delay time (v dd = ? 16 vdc, i d = ? 6.0 adc, v gs = ? 4.5 vdc, r g = 2.5 ) t d(on) ? 8.0 ? ns rise time t r ? 30 ? turn ? off delay time t d(off) ? 60 ? fall time t f ? 60 ? gate charge (v ds = ? 16 vdc, i d = ? 6.0 adc, v gs = ? 4.5 vdc) (note 4) q t ? 15 20 nc q gs ? 1.7 ? q gd ? 6.0 ? source ? drain diode characteristics forward on ? voltage (i s = ? 3.0 adc, v gs = 0 vdc) (note 4) (i s = ? 2.1 adc, v gs = 0 vdc) (i s = ? 3.0 adc, v gs = 0 vdc, t j = 125 c) v sd ? ? ? ? 0.82 ? 0.74 ? 0.68 ? 1.2 ? ? vdc reverse recovery time (i s = ? 3.0 adc, v gs = 0 vdc, di s /dt = 100 a/ s) (note 4) t rr ? 42 ? ns t a ? 17 ? t b ? 25 ? reverse recovery stored charge q rr ? 0.036 ? c 4. pulse test: pulse width 300 s, duty cycle 2.0%. 5. switching characteristics are independent of operating junction temperatures. free datasheet http:///
ntf6p02, NVF6P02 http://onsemi.com 3 typical electrical characteristics 12 0 6 2 8 4 figure 1. on ? region characteristics figure 2. transfer characteristics figure 3. on ? resistance versus gate ? to ? source voltage figure 4. on ? resistance versus drain current and gate voltage figure 5. on ? resistance variation with temperature figure 6. drain ? to ? source leakage current versus voltage ? v gs, gate ? to ? source voltage (volts) ? i d, drain current (amps) t j = 25 c t j = 100 c t j = ? 55 c 0 0.2 0.15 0 13 ? v gs, gate ? to ? source voltage (volts) r ds(on), drain ? to ? source resistance ( ) ? i d, drain current (amps) r ds(on), drain ? to ? source resistance ( ) v gs = ? 4.5 v 1.6 1.4 t j , junction temperature ( c) r ds(on), drain ? to ? source resistance (normalized) ? 50 50 25 0 ? 25 75 125 100 i d = ? 6.0 a v gs = ? 4.5 v 0.8 0.6 150 100 1000 ? v ds, drain ? to ? source voltage (volts) ? i dss , leakage (na) 21620 8 46 10,000 6 2 0 3 4 2 1 ? v ds, drain ? to ? source voltage (volts) ? i d, drain current (amps) 0 03 0.5 2 1 1.5 2.5 0.1 0.05 1.2 0.05 0.04 410 8 6 0.03 1.0 t j = 100 c t j = 25 c i d = ? 6.0 a t j = 25 c v ds ? 10 v v gs = 0 v 3 42 t j = 150 c 10 v gs = ? 1.2 v ? 1.4 v t j = 25 c 0.08 12 14 v gs = ? 2.5 v ? 1.6 v ? 1.8 v ? 2.0 v ? 2.2 v ? 3.2 v ? 4.4 v ? 5.0 v ? 7.0 v ? 10 v 6 9 12 ? 2.4 v 10 5 0.02 0.06 0.07 14 10 12 18 58 67 9 free datasheet http:///
ntf6p02, NVF6P02 http://onsemi.com 4 typical electrical characteristics ? v ds ? v ds 10 10 01520 ? v gs 1000 100 10 5 2 1 0 7 0 2400 1800 gate ? to ? source or drain ? to ? source voltage (volts) c, capacitance (pf) 1200 q g , total gate charge (nc) figure 7. capacitance variation figure 8. gate ? to ? source and drain ? to ? source voltage versus total charge ? v gs , gate ? to ? source voltage (v) figure 9. resistive switching time variation versus gate resistance r g , gate resistance ( ) figure 10. diode forward voltage versus current ? v sd , source ? to ? drain voltage (volts) ? i s , source current (amps) t, time (ns) 0816 1 10 100 0.3 0.6 1.2 i d = ? 6.0 a t j = 25 c ? v gs v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss 1 0.9 c iss v dd = ? 16 v i d = ? 3.0 a v gs = ? 4.5 v v gs = 0 v t j = 25 c t r t d(off) t d(on) q gd q gs q t 0 12 4 t f 600 3000 3 4 2 ? v ds , drain ? to ? source voltage (v) 0 4 8 12 16 20 5 5 1 3 4 5 6 free datasheet http:///
ntf6p02, NVF6P02 http://onsemi.com 5 typical electrical characteristics r thja(t) , effective transient thermal response figure 11. fet thermal response t, time (s) 0.1 0.01 d = 0.5 single pulse 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.2 0.1 0.05 0.02 0.01 1.0e+02 1.0e+03 1 normalized to r ja at steady state (1 pad) chip junction 0.0175 0.0154 f 0.0710 0.0854 f 0.2706 0.3074 f 0.5779 1.7891 f 0.7086 107.55 f ambient free datasheet http:///
ntf6p02, NVF6P02 http://onsemi.com 6 package dimensions sot ? 223 (to ? 261) case 318e ? 04 issue n 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint* style 3: pin 1. gate 2. drain 3. source 4. drain *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0 l l 0.20 ??? ??? 0.008 ??? ??? on semiconductor and are registered trademar ks of semiconductor components industries, llc (s cillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to an y products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of th e application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products ar e not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associ ated with such unintended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action em ployer. this literature is subject to all applicable copyrig ht laws and is not fo r resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ntf6p02t3/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative free datasheet http:///
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